aod3n60/AOU3N60 600v,2.5a n-channel mosfet general description product summary 700v@150 i d (at v gs =10v) 2.5a r ds(on) (at v gs =10v) < 3.5 w 100% uis tested! 100% r g tested! symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc maximum junction-to-ambient a,g t c =25c - 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 c junction and storage temperature range -50 to 150 c power dissipation b p d v 30 gate-source voltage t c =100c a i d t c =25c 2.5 1.6 the aod3n60 & AOU3N60 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 600 8 pulsed drain current c continuous drain current b mj avalanche current c 60 repetitive avalanche energy c derate above 25 o c 56.8 0.45 a 2 single pulsed avalanche energy h 120 mj v/ns 5 maximum case-to-sink a maximum junction-to-case d,f c/w c/w 1.8 0.5 2.2 g ds g s d g s d top view to252dpak bottom view top view to251 bottom view g s d g s d AOU3N60 aod3n60 rev 6: jul 2011 www.aosmd.com page 1 of 6
aod3n60/AOU3N60 symbol min typ max units 600 700 bv dss / ? tj 0.65 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 4 4.5 v r ds(on) 2.9 3.5 w g fs 2.8 s v sd 0.64 1 v i s maximum body-diode continuous current 2 a i sm 8 a c iss 240 304 370 pf c oss 25 31.4 38 pf c rss 2.6 3.3 4 pf r g 2.3 2.9 6 w q g 9.9 12 nc q gs 2.1 3 nc q gd 4.6 6 nc t d(on) 17 20 ns t r 17 20 ns t d(off) 24 30 ns t f 16 20 ns t rr 175 210 ns q rr 1.4 1.7 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c body diode reverse recovery charge i f =2.5a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =300v, i d =2.5a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =480v, i d =2.5a gate source charge gate drain charge v ds =5v i d =250 m a v ds =480v, t j =125c i s =1a,v gs =0v v ds =40v, i d =1.25a forward transconductance dynamic parameters zero gate voltage drain current id=250 a, vgs=0v v ds =0v, v gs =30v i dss zero gate voltage drain current v ds =600v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss m a v body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =1.25a reverse transfer capacitance i f =2.5a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25c. h. l=60mh, i as =2a, v dd =150v, r g =10 ? , starting t j =25c rev 6: jul 2011 www.aosmd.com page 2 of 6
aod3n60/AOU3N60 typical electrical and thermal characteristics 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c i d =30a 25c 125c 0 1 2 3 4 5 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1 2 3 4 5 6 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =1a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) rev 6: jul 2011 www.aosmd.com page 3 of 6
aod3n60/AOU3N60 typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 12 14 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =480v i d =2.5a 1 10 100 1000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) t j(max) =150c t c =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.2c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev 6: jul 2011 www.aosmd.com page 4 of 6
aod3n60/AOU3N60 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev 6: jul 2011 www.aosmd.com page 5 of 6
aod3n60/AOU3N60 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev 6: jul 2011 www.aosmd.com page 6 of 6
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